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UPG110P 数据手册 ( 数据表 ) - NEC => Renesas Technology

UPG110P image

零件编号
UPG110P

产品描述 (功能)

Other PDF
  1989  

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page
3 Pages

File Size
56.1 kB

生产厂家
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin flat package and in chip form.


FEATURES
• WIDE-BAND: 2 to 8 GHz
• HIGH GAIN: 15 dB at f = 2 to 8 GHz
• MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz
• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω
• HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY

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零件编号
产品描述 (功能)
PDF
生产厂家
Wide-Band Amplifier
Oki Electric Industry
Amplifier 2 GHz - 8 GHz
Teledyne Technologies Incorporated
Amplifier 2 GHz - 8 GHz
Teledyne Technologies Incorporated
32 - 45 GHz Wide Band Driver Amplifier ( Rev : 2005 )
TriQuint Semiconductor
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
NEC => Renesas Technology
Amplifier 2 GHz - 8 GHz
Teledyne Technologies Incorporated
Amplifier 2 GHz - 8 GHz
Teledyne Technologies Incorporated
Amplifier 2 GHz - 8 GHz
Teledyne Technologies Incorporated
Amplifier 2 GHz - 8 GHz
Teledyne Technologies Incorporated
Amplifier 2 GHz - 8 GHz
Teledyne Technologies Incorporated

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