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UT51C164MC-25 数据手册 ( 数据表 ) - Utron Technology Inc

UT51C164JC-25 image

零件编号
UT51C164MC-25

产品描述 (功能)

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page
26 Pages

File Size
264 kB

生产厂家
Utron
Utron Technology Inc Utron

GENERAL DESCRIPTION
The UT51C164 is high speed 5V EDO DRAMs organized as 256K bit X 16 I/O and fabricated with the CMOS process. The UT51C164 offers a combination of unique features including : EDO Page Mode operation for higher bandwidth with Page Mode cycle time as short as 14ns. All inputs are TTL compatible. Input and output capacitance is significantly lowered to increase performance and minimize loading. These features make the UT51C164 suited for wide variety of high performance computer systems and peripheral applications


FEATURES
■ RAS access time: 25, 35, 40, 50
■ 2 CAS Byte/Word Read/Write operation
■ CAS - before –RAS refresh capability
■ RAS only and Hidden refresh capability
■ Early write or output enable controlled write
■ Extended Data Out operation
■ Package : 40 pin 400mil SOJ
                    40 / 44 pin 400mil TSOP-Ⅱ
■ Single 5V+10% power supply
■ TTL compatible inputs and outputs
■ 512 refresh cycles /8ms

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零件编号
产品描述 (功能)
PDF
生产厂家
256k × 16-Bit EDO-DRAM
Siemens AG
256K WORD X 16 BIT EDO DRAM
Utron Technology Inc
3.3V 256K X 16 CMOS DRAM (EDO)
Alliance Semiconductor
5V 256K×16 CMOS DRAM (EDO)
Alliance Semiconductor
5V 256K×16 CMOS DRAM (EDO)
Alliance Semiconductor
64K WORD X 16 BIT EDO DRAM
Utron Technology Inc
256K x 16-Bit EDO-Dynamic RAM
Siemens AG
4 MEG x 16 EDO DRAM
Unspecified
4 MEG x 16 EDO DRAM ( Rev : 2001 )
Micron Technology
4 MEG x 16 EDO DRAM
Micron Technology

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