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VND5N07-E 数据手册 ( 数据表 ) - STMicroelectronics

VND5N07-E image

零件编号
VND5N07-E

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22 Pages

File Size
325.4 kB

生产厂家
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.


FEATUREs
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp
• Low current drawn from input pin
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the power mosfet
   (analog driving) 
• Compatible with standard Power MOSFET

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零件编号
产品描述 (功能)
PDF
生产厂家
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