VS-GT100NA120UX 数据手册 ( 数据表 ) - Vishay Semiconductors
零件编号
VS-GT100NA120UX
Other PDF
no available.
PDF
page
10 Pages
File Size
159.5 kB
生产厂家
Vishay Semiconductors
FEATURES
• Trench IGBT technology
• Very low VCE(on)
• Square RBSOA
• HEXFRED® clamping diode
• 10 μs short circuit capability
• Fully isolated package
• Very low internal inductance (≤ 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
BenefitS
• Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
零件编号
产品描述 (功能)
PDF
生产厂家
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A ( Rev : 2010 )
Vishay Semiconductors
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