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Vishay Semiconductors
DESCRIPTION
VSLB3948 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package.
FEATURES
• Package type: leaded
• Package form: T-1, clear epoxy
• Dimensions: Ø 3 mm
• High speed
• High radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity: ϕ = ± 22°
• Peak wavelength: λp = 940 nm
• Good spectral matching to Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control units
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
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High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
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High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
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High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
Vishay Semiconductors