DESCRIPTION
The STx21NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
FEATUREs
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
APPLICATIONS
The MDmesh™ II family is very suitable for
increasing power density of high voltage converters
allowing system miniaturization and higher efficiencies.