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WED8L24513V 数据手册 ( 数据表 ) - White Electronic Designs Corporation

WED8L24513V image

零件编号
WED8L24513V

Other PDF
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page
6 Pages

File Size
350.6 kB

生产厂家
WEDC
White Electronic Designs Corporation WEDC

DESCRIPTION
The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24513V is ideal for creating a single chip memory solution for the Motorola DSP5630x (Figure 7) or a two chip solution for the Analog Devices SHARCTM DSP (Figure 8).


FEATURES
■ 512Kx24 bit CMOS Static
■ Random Access Memory Array
    ■ Fast Access Times: 10, 12, and 15ns
    ■ Master Output Enable and Write Control
    ■ TTL Compatible Inputs and Outputs
    ■ Fully Static, No Clocks
■ Surface Mount Package
    ■ 119 Lead BGA (JEDEC MO-163), No. 391
    ■ Small Footprint, 14mmx22mm
    ■ Multiple Ground Pins for Maximum Noise Immunity
■ Single +3.3V (±5%) Supply Operation
■ DSP Memory Solution
    ■ Motorola DSP5630x
    ■ Analog Devices SHARCTM

Page Link's: 1  2  3  4  5  6 

零件编号
产品描述 (功能)
PDF
生产厂家
Asynchronous SRAM, 3.3V, 512Kx24
White Electronic Designs Corporation
Asynchronous SRAM, 3.3V, 256Kx24
White Electronic Designs Corporation
Asynchronous SRAM, 3.3V, 256Kx24
White Electronic Designs Corporation
128Kx24 Asynchronous SRAM, 5V
White Electronic Designs => Micro Semi
128Kx24 Asynchronous SRAM, 5V
White Electronic Designs Corporation
512Kx8 SRAM 3.3V
White Electronic Designs => Micro Semi
64K x 24 1.5Mb Asynchronous SRAM
Giga Semiconductor
64K x 16 1Mb Asynchronous SRAM
Giga Semiconductor
64K x 16 1Mb Asynchronous SRAM
Unspecified
512K x 16 8Mb Asynchronous SRAM
Giga Semiconductor

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