General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply .

FEATUREs
2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V
Ultra-low Gate Charge(Typical 9nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)