General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electroniclampballast.

FEATUREs
■ 5.5A, 400V, RDS(on)(Max 1.0Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical32nC)
■ Fast Switching Capability
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150℃)