GeneralDescription
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited  for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.

FEATUREs
� 10A, 400V, RDS(on)(Max 0.55Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 60nC)
� Fast Switching Capability
� 100% Avalanche Tested
� Maximum Junction Temperature Range(150℃)