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WNMD2172-8/TR 数据手册 ( 数据表 ) - Will Semiconductor Ltd.

WNMD2172 image

零件编号
WNMD2172-8/TR

Other PDF
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PDF
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page
8 Pages

File Size
1.4 MB

生产厂家
WILLSEMI
Will Semiconductor Ltd. WILLSEMI

Descriptions
The WNMD2172 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2172 is Pb-free and Halogen-free.


FEATUREs
● Trench Technology
● Supper high density cell design
● Excellent ON resistance for higher DC current
● Extremely Low Threshold Voltage
● Small package TSSOP-8L


APPLICATIONs
● Driver for Relay, Solenoid, Motor, LED etc.
● DC-DC converter circuit
● Power Switch
● Load Switch
● Charging


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