Descriptions
The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitable for use in DC-DC conversion,power switch and charging circuit. Standard Product WNMD2176 is Pb-free.

FEATUREs
● Trench Technology
● Supper high density cell design
● Excellent ON resistance
● Extremely Low Threshold Voltage
● Small package SOT-23-6L

APPLICATIONs
● Driver for Relay, Solenoid, Motor, LED etc.
● Power supply converters circuit
● Load/Power Switching for portable device