Product Description
RFMD’s XD010-22S-D2F 12 W power module is a robust 2-Stage Class A/AB amplifier module for use in the driver stages of GSM/EDGE RF power amplifiers for cellular base stations. The power transistors are fabricated using RFMD’s latest, high performance LDMOS process. This unit operates from a single volage and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is a drop-in, no-tune solution for medium power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. It is internally matched to 50Ω.

FEATUREs
■ Available in RoHS Compliant Packaging
■ 50Ω RF Impedance
■ 12 W output P1dB
■ Single Supply Operation: Nominally 28 V
■ High Gain: 31 dB at 1840 MHz
■ High Efficiency: 25% at 1840 MHz
■ Advanced, XeMOS II LDMOS FETS

APPLICATIONs
■ Base Station PA Driver
■ Repeater
■ GSM/EDGE