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SFP95N03L

Logic N-Channel MOSFET

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SemiWell Semiconductor

SFP95N03L

Logic N-Channel MOSFET

Features

■ Low RDS(on) (0.0085Ω )@VGS=10V

■ Low Gate Charge (Typical 39nC)

■ Low Crss (Typical 185pF)

■ Improved dv/dt Capability

■ 100% Avalanche Tested

■ Maximum Junction Temperature Range (175°C)

General Description

This Power MOSFET is produced using SemiWell’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a low

gate charge with superior switching performance, and rugged

avalanche characteristics. This Power MOSFET is well suited

for synchronous DC-DC Converters and Power Management in

portable and battery operated products.

Symbol

{ 2. Drain

1. Gate

{

●

◀▲

●

●

{ 3. Source

TO-220

123

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

dv/dt

PD

TSTG, TJ

TL

Parameter

Drain to Source Voltage

Continuous Drain Current(@TC = 25°C)

Continuous Drain Current(@TC = 100°C)

Drain Current Pulsed

Gate to Source Voltage

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation(@TC = 25 °C)

Derating Factor above 25 °C

Operating Junction Temperature & Storage Temperature

Maximum Lead Temperature for soldering purpose,

1/8 from Case for 5 seconds.

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case to Sink

Thermal Resistance, Junction-to-Ambient

Min.

-

-

-

(Note 6)

(Note 1)

(Note 2)

(Note 3)

Value

30

95

67.3

380

±20

450

7.0

150

1.0

- 55 ~ 175

300

Value

Typ.

-

0.5

-

Max.

1.0

-

62.5

Units

V

A

A

A

V

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

°C/W

September, 2002. Rev. 0.

1/7

Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

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