Fig 1. On-State Characteristics
Top :
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
102
4.0 V
3.5 V
Bottom : 3.0 V
101
10-1
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
20
15
VGS = 5V
VGS = 10V
10
5
※ Note : TJ = 25℃
0
0
100
200
300
400
ID, Drain Current [A]
Fig 5. Capacitance Characteristics
6000
5000
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
4000
3000
2000
1000
0
0
※ Notes :
1. VGS = 0V
2. f=1MHz
Ciss
Coss
Crss
5
10
15
20
25
30
35
VDS, Drain-Source Voltage [V]
SFP95N03L
Fig 2. Transfer Characteristics
102
101
175oC
25oC
100
10-1
0
2
-55oC
※ Notes :
1. VDS = 15V
2. 250µ s Pulse Test
4
6
8
10
12
VGS, Gate-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
102
101
100
10-1
0.2
175℃
0.4
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage[V]
Fig 6. Gate Charge Characteristics
12
VDS = 15V
10
VDS = 24V
8
6
4
2
※ Note : ID = 95 A
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
Qg, Total Gate Charge [nC]
3/7