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SFP95N03L 查看數據表(PDF) - Unspecified

零件编号
产品描述 (功能)
比赛名单
SFP95N03L
ETC
Unspecified ETC
SFP95N03L Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
SFP95N03L
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
On Characteristics
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 30V, VGS = 0V
VDS = 24V, TC = 150 °C
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
-
-
V
-
0.023
-
V/°C
-
-
1
uA
-
-
10
uA
-
-
100
nA
-
-
-100
nA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250uA
1.0
-
3.0
V
RDS(ON)
Static Drain-Source On-state Resis-
tance
VGS =10 V, ID = 47.5A
VGS =5 V, ID = 47.5A
-
-
0.0065 0.0085
0.0085 0.0115
Dynamic Characteristics
Ciss
Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Dynamic Characteristics
VGS =0 V, VDS =25V, f = 1MHz
-
1015 1320
-
845 1110
pF
-
185 240
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
-
VDD =15V, ID =95A, RG =50
-
see fig. 13.
-
(Note 4, 5)
-
-
VDS =24V, VGS =5V, ID =95A
-
45
100
165 340
ns
70
150
140 290
39
51
13
-
nC
Qgd
Gate-Drain Charge(Miller Charge)
see fig. 12.
(Note 4, 5)
-
18
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =95A, VGS =0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=95A,VGS=0V,dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 50 uH, IAS =95A, VDD = 15V, RG = 0, Starting TJ = 25°C
3. ISD 95A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
6. Continuous Drain current calculated by maximum junction temperature ; limited by package
Min.
-
-
-
-
-
Typ.
-
-
-
55
65
Max.
95
380
1.5
-
-
Unit.
A
V
ns
nC
2/7

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