BS107 查看數據表（PDF） - Philips Electronics

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BS107

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

BSP152

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No secondary breakdown.

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in a

SOT223 envelope, intended for use

as a line current interruptor in

telephone sets and for applications in

relay, high-speed and line

transformer drivers.

QUICK REFERENCE DATA

SYMBOL PARAMETER

VDS

drain-source

voltage

ID

Ptot

±VGSO

DC drain current

total power

dissipation

gate-source

voltage

RDS(on)

drain-source

on-resistance

VGS(off)

gate-source

cut-off voltage

CONDITIONS

MIN. MAX. UNIT

−

200 V

−

up to Tamb = 25 °C −

550 mA

1.5 W

open drain

−

40

V

ID = 750 mA;

VGS = 10 V

ID = 1 mA;

VDS = VGS

−

2.5 Ω

1.5 3.5 V

PINNING - SOT223

PIN

1

2

3

4

DESCRIPTION

gate

drain

source

drain

handbook, halfpage

4

d

g

1

2

3

s

Top view

MAM054

Fig.1 Simplified outline and symbol.

April 1995

2

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