BS107 查看數據表（PDF） - Philips Electronics

零件编号

产品描述 (功能)

比赛名单

BS107

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

BSP152

handbook2, h.2alfpage

k2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

–50

0

MRC209

50

100 Tj (°C) 150

k = -R----D-R--S---D(--o-S-n--(-)o---na--)--t--a--2-t--5--T---o-j--C---

Typical RDSon at ID = 750 mA; VGS = 10 V.

Fig.13 Temperature coefficient of

drain-source on-resistance.

handbook1,.2halfpage

k

1

MRC213

0.8

0.6

–50

0

50

k = -V----G--V-S---G(--t-hS--)-(--t-h-a--)--t-a--2-t---5-T----oj---C---

Typical VGS(th) at ID = 1 mA.

100

150

Tj (°C)

Fig.14 Temperature coefficient of gate-source

threshold voltage.

April 1995

7

Share Link: