BS107 查看數據表（PDF） - Philips Electronics

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BS107

N-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

N-channel enhancement mode vertical

D-MOS transistor

Product specification

BSP152

handbooIDk, halfpage

(A)

3

VGS = 10 V 7 V

MRC204

P = 1.5 W

6V

2

5V

4.5 V

1

4V

3.5 V

0

0

4

8 VDS (V) 12

Tj = 25 °C.

Fig.6 Typical output characteristics.

handbook6,0h0alfpage VGS = 10 V 5 V 4 V

ID

(mA)

400

MRC205

3.5 V

200

0

0

1

Tj = 25 °C.

2 VDS (V) 3

Fig.7 Typical output characteristics.

3

handbook, halfpage

ID

(mA)

2

MRC206

1

0

0

2

4

6

8

10

VDS (V)

VDS = 10 V; Tj = 25 °C.

Fig.8 Typical transfer characteristics.

April 1995

7

hanRdDboSo(ko, nh)alfpage

(Ω) 6

5

4

3

2

1

0

0.01

MRC208

VGS = 3.5 V 4 V 5 V

6V

7V

8V

0.1

1 ID (A) 5

Tj = 25 °C.

Fig.9 Drain-source on-resistance as a function of

drain current, typical values.

5

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