ADF4360-9 查看數據表（PDF） - Analog Devices
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ADF4360-9 Datasheet PDF : 24 Pages
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Data Sheet
ADF4360-9
SPECIFICATIONS
AVDD = DVDD = VVCO = 3.3 V ± 10%; AGND = DGND = 0 V; TA = TMIN to TMAX, unless otherwise noted.1
Table 1.
Parameter
REFIN CHARACTERISTICS
REFIN Input Frequency
REFIN Input Sensitivity
REFIN Input Capacitance
REFIN Input Current
PHASE DETECTOR
Phase Detector Frequency2
CHARGE PUMP
ICP Sink/Source3
High Value
Low Value
RSET Range
ICP Three-State Leakage Current
Sink and Source Current Matching
ICP vs. VCP
ICP vs. Temperature
LOGIC INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINH/IINL
Input Capacitance, CIN
LOGIC OUTPUTS
Output High Voltage, VOH
Output High Current, IOH
Output Low Voltage, VOL
POWER SUPPLIES
AVDD
DVDD
VVCO
AIDD 4
DIDD4
IVCO4, 5
IRFOUT4
Low Power Sleep Mode4
RF OUTPUT CHARACTERISTICS5
Maximum VCO Output Frequency
Minimum VCO Output Frequency
VCO Output Frequency
VCO Frequency Range
VCO Sensitivity
Lock Time6
B Version Unit
Conditions/Comments
10/250
0.7/AVDD
0 to AVDD
5.0
±60
MHz min/MHz max
V p-p min/V p-p max
V max
pF max
μA max
For f < 10 MHz, use a dc-coupled, CMOS-compatible
square wave, slew rate > 21 V/μs
AC-coupled
CMOS-compatible
8
MHz max
2.5
0.312
2.7/10
0.2
2
1.5
2
mA typ
mA typ
kΩ min/kΩ max
nA typ
% typ
% typ
% typ
With RSET = 4.7 kΩ
1.25 V ≤ VCP ≤ 2.5 V
1.25 V ≤ VCP ≤ 2.5 V
VCP = 2.0 V
1.5
V min
0.6
V max
±1
μA max
3.0
pF max
DVDD − 0.4
500
0.4
V min
μA max
V max
CMOS output chosen
IOL = 500 μA
3.0/3.6
AVDD
AVDD
5
2.5
12.0
3.5 to 11.0
7
V min/V max
mA typ
mA typ
mA typ
mA typ
μA typ
ICORE = 5 mA
RF output stage is programmable
400
65
90/108
1.2
2
400
MHz
MHz
MHz min/MHz max
Ratio
MHz/V typ
μs typ
ICORE = 5 mA; depending on L1 and L2; see the
Choosing the Correct Inductance Value section
L1, L2 = 270 nH; see the Choosing the Correct
Inductance Value section for other frequency values
fMAX/fMIN
L1, L2 = 270 nH; see the Choosing the Correct
Inductance Value section for other sensitivity values
To within 10 Hz of final frequency
Rev. B | Page 3 of 24
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