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ADF4360-9 查看數據表(PDF) - Analog Devices

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ADF4360-9 Datasheet PDF : 24 Pages
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ADF4360-9
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
AVDD to GND1
AVDD to DVDD
VVCO to GND
VVCO to AVDD
Digital Input/Output Voltage to GND
Analog Input/Output Voltage to GND
REFIN to GND
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
LFCSP θJA Thermal Impedance
Paddle Soldered
Paddle Not Soldered
Lead Temperature, Soldering
Vapor Phase (60 sec)
Infrared (15 sec)
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V
−40°C to + 85°C
−65°C to +150°C
150°C
50°C/W
88°C/W
215°C
220°C
1 GND = CPGND = AGND = DGND = 0 V.
Data Sheet
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
The transistor count is 12,543 (CMOS) and 700 (bipolar).
ESD CAUTION
Rev. B | Page 6 of 24

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