ADP3212AMNR2G 查看數據表（PDF） - ON Semiconductor
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ADP3212AMNR2G Datasheet PDF : 35 Pages
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ADP3212A, NCP3218A
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max Units
HIGH−SIDE MOSFET DRIVER
Pulldown Resistance, Sinking
Current (Note 3)
BST = PVCC
0.8
2.0
W
Transition Times
Dead Delay Times
trDRVH
tfDRVH
tpdhDRVH
BST = PVCC, CL = 3 nF, Figure 2
BST = PVCC, CL = 3 nF, Figure 2
BST = PVCC, Figure 2
T = −10°C to 100°C
T = −40°C to 100°C
15
35
ns
13
31
ns
28
32
36
50
BST Quiescent Current
EN = L (Shutdown)
EN = H, no switching
1.0
10
mA
200
LOW−SIDE MOSFET DRIVER
Pullup Resistance, Sourcing
Current (Note 3)
0.88
2.8
W
Pulldown Resistance, Sinking
Current (Note 3)
0.65
1.7
W
Transition Times
Propagation Delay Times
trDRVL
tfDRVL
tpdhDRVL
CL = 3 nF, Figure 2
CL = 3 nF, Figure 2
CL = 3 nF, Figure 2
T = −10°C to 100°C
T = −40°C to 100°C
15
35
ns
14
35
ns
11
30
12
40
SW Transition Timeout
tTOSW
DRVH = L, SW = 2.5 V
T = −10°C to 100°C
T = −40°C to 100°C
ns
85
250
300
85
250
450
SW Off Threshold
PVCC Quiescent Current
VOFFSW
EN = L (Shutdown)
EN = H, no switching
1.6
V
1.0
10
mA
170
BOOTSTRAP RECTIFIER SWITCH
On Resistance (Note 3)
EN = L or EN = H and DRVL = H
5.0
7.0
12
W
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
3. Based on bench characterization data.
4. Timing is referenced to the 90% and 10% points, unless otherwise noted.
IN
tpdlDRVL
DRVL
tfDRVL
tpdlDRVH
trDRVL
DRVH
(WITH RESPECT TO SW)
tpdhDRVH
trDRVH
VTH
tfDRVH
VTH
tpdhDRVL
SW
1.0 V
Figure 2. Timing Diagram (Note 4)
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