AS6C3216 查看數據表（PDF） - Alliance Semiconductor
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AS6C3216 Datasheet PDF : 13 Pages
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Rev. 1.0
AS6C3216
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 45mA (TYP.)
Standby current : 10A (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control :
(i) BYTE# fixed to VCC
LB# controlled DQ0 ~ DQ7
UB# controlled DQ8 ~ DQ15
(ii) BYTE# fixed to VSS
DQ15 used as address pin, while LB#,
UB# and DQ8~DQ14 pins not used
Data retention voltage : 1.2V (MIN.)
Green package available
Package : 48-pin 12mm x 20mm TSOP-I
GENERAL DESCRIPTION
The AS6C3216 is a 33,554,432-bit low power
CMOS static random access memory organized as
2,097,152 words by 16 bits or 4,194,304 words by 8
bits. It is fabricated using very high performance,
high reliability CMOS technology. Its standby current
is stable within the range of operating temperature.
The AS6C3216 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The AS6C3216 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Product
Family
AS6C3216(I)
Operating
Temperature
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
Speed
55ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
10µA(SL)
45mA
Alliance Memory, Inc.
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