AS6C3216 查看數據表（PDF） - Alliance Semiconductor

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AS6C3216

32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM

Alliance Semiconductor 

Rev. 1.0

AS6C3216

32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM

PIN CONFIGURATION

A15

1

A14

2

A13

3

A12

4

A11

5

A10

6

A9

7

A8

8

A19

9

A20

10

WE#

11

CE2

12

NC

13

UB#

14

LB#

15

A18

16

A17

17

A7

18

A6

19

A5

20

A4

21

A3

22

A2

23

A1

24

AS6C3216

TSOP-I

ABSOLUTE MAXIMUN RATINGS*

48

A16

47

BYTE#

46

Vss

45

DQ15/A-1

44

DQ7

43

DQ14

42

DQ6

41

DQ13

40

DQ5

39

DQ12

38

DQ4

37

Vcc

36

DQ11

35

DQ3

34

DQ10

33

DQ2

32

DQ9

31

DQ1

30

DQ8

29

DQ0

28

OE#

27

Vss

26

CE#

25

A0

PARAMETER

SYMBOL

RATING

UNIT

Voltage on VCC relative to VSS

VT1

-0.5 to 4.6

V

Voltage on any other pin relative to VSS

VT2

-0.5 to VCC+0.5

V

Operating Temperature

TA

-40 to 85(I grade)

℃

Storage Temperature

TSTG

-65 to 150

℃

Power Dissipation

PD

1

W

DC Output Current

IOUT

50

mA

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

Alliance Memory, Inc.

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