BB403 查看數據表（PDF） - Hitachi -> Renesas Electronics

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BB403

Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB403M

Gain Reduction vs.

Gate2 to Source Voltage

50

V DS = VG1 = 5 V

40

V G2S = 4 V

RG= 470 k Ω

f = 900 MHz

30

20

10

0

1

2

3

4

5

Gate2 to Source Voltage V G2S (V)

Drain Current vs. Gate Resistance

35

V DS = 5 V

30

V G1= 5 V

V G2S = 4 V

25

20

15

10

5

0

0.1 0.2 0.5 1 2

5 10

Gate Resistance R G (M Ω)

Input Capacitance vs.

Gate2 to Source Voltage

4

3

2

V DS = 5 V

V G1= 5 V

1

V G2S = 4 V

RG= 470 kΩ

f = 1 MHz

0

1

2

3

4

Gate2 to Source Voltage V G2S (V)

10

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