BB403 查看數據表（PDF） - Hitachi -> Renesas Electronics
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BB403 Datasheet PDF : 14 Pages
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Gate1 Current vs.
Gate2 to Source Voltage
10
V DS = 5 V
RG = 470 k Ω
8
VG1 = 5 V
4.5 V
6
4V
3.5 V
4
3V
2.5 V
2
2V
0
1.0 2.0
3.0 4.0 5.0
Gate2 to Source Voltage VG2S (V)
BB403M
Forward Transfer Admittance
vs. Drain Current
50
VDS = 5 V
3.5 V 4 V
40
3V
2.5 V
30
20
10
VG2S = 2 V
0
5
10 15 20 25
Drain Current I D (mA)
Forward Transfer Admittance
vs. Gate1 Voltage
50
V DS = 5 V
RG = 470 kΩ
40
VG2S = 4 V
3V
30
2V
20
10
1V
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Power Gain vs. Gate Resistance
40
35
30
25
20
V DS = 5 V
15
V G1= 5 V
V G2S = 4 V
f = 200 MHz
10
0.1 0.2 0.5 1 2
5 10
Gate Resistance R G (M Ω)
7
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