BB403 查看數據表（PDF） - Hitachi -> Renesas Electronics

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BB403

Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB403M

Build in Biasing Circuit MOS FET IC

VHF/UHF RF Amplifier

ADE-208-699B (Z)

3rd. Edition

Mar. 2001

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• High forward transfer admittance;

(|yfs| = 42 mS typ. at f = 1 kHz)

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4R (SOT-143 var.)

Outline

MPAK-4R

Notes:

3

4

2

1

1. Source

2. Drain

3. Gate2

4. Gate1

1. Marking is “CX –”.

2. BB403M is individual type number of HITACHI BBFET.

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