CY7C1329H-133AXC(2011) 查看數據表（PDF） - Cypress Semiconductor
零件编号
产品描述 (功能)
比赛名单
CY7C1329H-133AXC Datasheet PDF : 20 Pages
| |||
CY7C1329H
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 C to +150C
Ambient Temperature with
Power Applied ......................................... –55 C to +125 C
Supply Voltage on VDD Relative to GND .....–0.5 V to +4.6 V
Supply Voltage on VDDQ Relative to GND .... –0.5 V to +VDD
DC Voltage Applied to Outputs
in Tri-State ........................................–0.5 V to VDDQ + 0.5 V
DC Input Voltage ................................ –0.5 V to VDD + 0.5 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(per MIL-STD-883, Method 3015) ......................... > 2001 V
Latch-up Current ................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
0 °C to +70 °C
–40 °C to +85 °C
VDD
VDDQ
3.3 V– 5% / 2.5 V – 5% to
+ 10%
VDD
Electrical Characteristics
Over the Operating Range
Parameter [10, 11]
Description
Test Conditions
VDD
VDDQ
Power Supply Voltage
I/O Supply Voltage
for 3.3 V I/O
for 2.5 V I/O
VOH
Output HIGH Voltage
for 3.3 V I/O, IOH = –4.0 mA
for 2.5 V I/O, IOH = –1.0 mA
VOL
Output LOW Voltage
for 3.3 V I/O, IOL = 8.0 mA
for 2.5 V I/O, IOL = 1.0 mA
VIH
Input HIGH Voltage [10]
for 3.3 V I/O
for 2.5 V I/O
VIL
Input LOW Voltage [10]
for 3.3 V I/O
for 2.5 V I/O
IX
Input Leakage Current except GND VI VDDQ
ZZ and MODE
Input Current of MODE
Input = VSS
Input = VDD
Input Current of ZZ
Input = VSS
Input = VDD
IOZ
Output Leakage Current
GND VI VDDQ, Output Disabled
IDD
VDD Operating Supply
VDD = Max, IOUT = 0 mA, 6-ns cycle,166 MHz
Current
f = fMAX = 1/tCYC
7.5-ns cycle,133 MHz
ISB1
Automatic CS Power-down VDD = Max,
6-ns cycle, 166 MHz
Current—TTL Inputs
Device Deselected,
VIN VIH or VIN VIL,
7.5-ns cycle,133 MHz
f = fMAX = 1/tCYC
ISB2
Automatic CS Power-down VDD = Max,
All speeds
Current—CMOS Inputs
Device Deselected,
VIN 0.3 V or
VIN > VDDQ – 0.3 V, f = 0
Min
3.135
3.135
2.375
2.4
2.0
–
–
2.0
1.7
–0.3
–0.3
–5
Max Unit
3.6
V
VDD
V
2.625
V
–
V
–
V
0.4
V
0.4
V
VDD + 0.3 V V
VDD + 0.3 V V
0.8
V
0.7
V
5
A
–30
–
A
–
5
A
–5
–
A
–
30
A
–5
5
A
–
240
mA
–
225
mA
–
100
mA
–
90
mA
–
40
mA
Notes
10. Overshoot: VIH(AC) < VDD + 1.5 V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2 V (Pulse width less than tCYC/2).
11. TPower-up: Assumes a linear ramp from 0 V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05673 Rev. *E
Page 9 of 20
[+] Feedback
Share Link: 