DIM200PHM33-F000(2004) 查看數據表（PDF） - Dynex Semiconductor

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DIM200PHM33-F000
(Rev.:2004)

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200PHM33-F000

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

Test Conditions

ICES

I

GES

VGE(TH)

V†

CE(sat)

I

F

IFM

VF†

C

ies

Cres

LM

R

INT

SCData

Collector cut-off current

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

Diode forward current

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125˚C

VGE = ±20V, VCE = 0V

IC =20mA, VGE = VCE

V = 15V, I = 200A

GE

C

VGE = 15V, IC = 200A, , Tcase = 125˚C

DC

Diode maximum forward current

Diode forward voltage

Input capacitance

Reverse transfer capacitance

Module inductance - pins 2 & 3

tp = 1ms

I = 200A

F

IF = 200A, Tcase = 125˚C

VCE = 25V, VGE = 0V, f = 1MHz

VCE = 25V, VGE = 0V, f = 1MHz

-

Internal transistor resistance - pins 2 & 3

-

Short circuit. ISC

Tj = 125˚C, VCC = 2500V,

I1

t

p

≤

10µs,

V

CE(max)

=

V

CES

–

L*.

di/dt

I

2

IEC 60747-9

Note:

† Measured at auxiliary terminals.

L* is the circuit inductance + LM

Min. Typ. Max. Units

-

-

1

mA

-

-

15 mA

-

400

-

nA

5.5

6.5

7.0

V

-

2.8

-

V

-

3.6

-

V

-

200

-

A

-

400

-

A

-

2.9

-

V

-

3.0

-

V

-

36

-

nF

-

0.55

-

nF

-

40

-

nH

-

0.5

-

mΩ

-

1000

-

A

-

930

-

A

4/9

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

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