DIM200PHM33-F000(2004) 查看數據表（PDF） - Dynex Semiconductor
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DIM200PHM33-F000 Datasheet PDF : 9 Pages
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DIM200PHM33-F000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
t
Turn-off delay time
d(off)
tf
Fall time
E
OFF
Turn-off energy loss
td(on)
Turn-on delay time
tr
Rise time
Qg
Gate charge
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
EREC
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
Turn-off delay time
tf
Fall time
EOFF
Turn-off energy loss
td(on)
Turn-on delay time
t
Rise time
r
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse current
E
Diode reverse recovery energy
REC
Test Conditions
Min. Typ. Max. Units
IC = 200A
VGE = ±15V
V = 1800V
CE
RG(ON) = RG(OFF) =16.5Ω
Cge = 56nF
L ~ 100nH
-
1950
-
ns
-
170
-
ns
-
220
-
mJ
-
1180
-
ns
-
225
-
ns
-
5
-
µC
IC = 200A, VGE = ±15V, VCE = 1800V,
-
290
-
mJ
R
G(ON)
=
7.5Ω,
C
ge
=
56nF,
L
~
100nH
IF = 200A, VR = 1800V,
dIF/dt = 1600A/µs
-
80
-
µC
-
144
-
A
-
75
-
mJ
Test Conditions
I = 200A
C
VGE = ±15V
VCE = 1800V
RG(ON) = RG(OFF) =16.5Ω
Cge = 56nF, L ~ 100nH
IC = 200A, VGE = ±15V, VCE = 1800V,
RG(ON) =7.5Ω, Cge = 56nF, L ~ 100nH
Min.
-
-
-
-
-
-
Typ.
2200
190
265
1150
280
390
Max. Units
-
ns
-
ns
-
mJ
-
ns
-
ns
-
mJ
IF = 200A, VR = 1800V,
dI /dt
F
=
1600A/µs
-
125
-
µC
-
155
-
A
-
130
-
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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