DIM200PHM33-F000(2004) 查看數據表（PDF） - Dynex Semiconductor

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DIM200PHM33-F000
(Rev.:2004)

Half Bridge IGBT Module

Dynex Semiconductor 

DIM200PHM33-F000

450

Tj = 25˚C

400

Tj = 125˚C

350

300

250

200

150

100

50

0

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Forward voltage, VF - (V)

Fig. 7 Diode typical forward characteristics

350

Tj = 125˚C

300

500

400

Chip

300

Module

200

Conditions:

100 Tcase = 125˚C,

Vge = ±15V,

Rg(off) = 16.5 Ohms,

Cge = 56nF

0

0

500 1000 1500 2000 2500 3000

Collector emitter voltage, Vce - (V)

Fig. 8 Reverse bias safe operating area

3500

100

Diode

Transistor

250

10

200

150

100

50

0

0 500 1000 1500 2000 2500 3000

Reverse voltage, VR - (V)

Fig. 9 Diode reverse bias safe operating area

3500

1

0.1

0.001

1

2

3

IGBT Ri (˚C/KW) 1.79 11.26 15.77

τi (ms)

0.13 5.80 48.03

Diode Ri (˚C/KW) 3.58 22.52 31.53

τi (ms)

0.13 5.80 48.03

0.01

0.1

1

Pulse width, tp - (s)

Fig. 10 Transient thermal impedance

4

19.11

248.53

38.23

248.53

10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

7/9

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