HS-303CEH 查看數據表（PDF） - Intersil

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HS-303CEH

Radiation Hardened BiCMOS Dual SPDT Analog Switch

Intersil 

HS-303CEH

Die Characteristics

DIE DIMENSIONS:

2815µm x 5325µm (106 milsx205 mils)

Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)

INTERFACE MATERIALS:

Glassivation:

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0kÅ ± 1.0kÅ

Top Metallization:

Type: AlSiCu

Thickness: 16.0kÅ ± 2kÅ

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Metallization Mask Layout

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

<2.0 x 105 A/cm2

Transistor Count:

216

Package Lid Potential:

Floating

HS-303CEH

V+

S3

S4

D3

D4

D1

S1

IN1

ORIGIN

7

GND

V-

D1

D2

S2

IN2

FN8399.1

April 19, 2013

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