IDT71V124S15 查看數據表（PDF） - Integrated Device Technology

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IDT71V124S15

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Integrated Device Technology 

IDT71V124, 3.3V CMOS Static RAM

1 Meg (128K x 8-Bit), Revolutionary Pinout

Commercial and Industrial Temperature Ranges

Pin Configuration

Absolute Maximum Ratings(1)

A0

1

32 A16

Symbol

Rating

Value

Unit

A1 2

A2 3

A3 4

31 A15

30 A14

29 A13

VTERM(2)

Terminal Voltage with

Respect to GND

–0.5 to +4.1(2)

V

CS 5

28 OE

TA

Operating Temperature

0 to +70

oC

I/O0

6 SO32-3 27

I/O7

I/O1 7

26 I/O6

TBIAS

Temperature Under Bias

–55 to +125

oC

VDD

8

GND 9

25 GND

24 VDD

TSTG

Storage Temperature

–55 to +125

oC

I/O2 10

23 I/O5

PT

Power Dissipation

0.5

W

I/O3 11

WE 12

A4 13

A5 14

E A6 15

A7 16

22 I/O4

21 A12

20 A11

19 A10

18 A9

17 A8

N C SOJ

3484 drw 02

Top View

IOUT

DC Output Current

50

mA

NOTES:

3484 tbl 02

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliabilty.

2. VTERM must not exceed VDD + 0.5V.

I N A Truth Table(1,2)

T E S CS

OE

WE

I/O

Function

R C 4 S L

L

H

DATAOUT Read Data

Recommended Operating

Temperature and Supply Voltage

2 N L

X

L

DATAIN Write Data

Grade

Temperature

GND

VDD

A S 1 G L

H

H

High-Z Output Disabled

Commercial

0°C to +70°C

0V

See Below

I H

X

X

High-Z Deselected – Standby (ISB)

Industrial

–40°C to +85°C

0V

See Below

P E 1V S VHC(3)

X

X

High-Z Deselected – Standby (ISB1)

3484 tbl 02a

L 7 E NOTES:

D 1. H = VIH, L = VIL, x = Don't care.

2. VLC = 0.2V, VHC = VDD –0.2V.

O R 3. Other inputs ≥VHC or ≤VLC.

3484 tbl 01

S E W Capacitance

D E (TA = +25°C, f = 1.0MHz, SOJ package)

B R N Symbol

Parameter(1)

Conditions

Max. Unit

CIN Input Capacitance

VIN = 3dV

8 pF

O O R CI/O I/O Capacitance

VOUT = 3dV

8 pF

O NOTE:

3484 tbl 03

F 1. This parameter is guaranteed by device characterization, but is not production

Recommended DC Operating

Conditions

Symbol

Parameter

Min. Typ. Max. Unit

VDD Supply Voltage

3.0

3.3

3.6

V

GND Ground

0

0

0

V

VIH Input High Voltage

VIL Input Low Voltage

2.0

–0.3(1)

____ VDD +0.3 V

____

0.8

V

NOTE:

3484 tbl 04

tested.

1. VIL (min.) = –1V for pulse width less than 5ns, once per cycle.

DC Electrical Characteristics

(VDD = 3.3V ± 10%, Commercial and Industrial Temperature Ranges)

Symbol

|ILI|

|ILO|

VOL

VOH

Parameter

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Test Condition

VDD = Max., VIN = GND to VDD

VDD = Max., CS = VIH, VOUT = GND to VDD

IOL = 8mA, VDD = Min.

IOH = –8mA, VDD = Min.

6.242

IDT71V124

Min.

Max.

___

5

___

5

___

0.4

2.4

___

Unit

µA

µA

V

V

3484 tbl 05

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