IDT71V124S15 查看數據表（PDF） - Integrated Device Technology

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IDT71V124S15

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Integrated Device Technology 

IDT71V124, 3.3V CMOS Static RAM

1 Meg (128K x 8-Bit), Revolutionary Pinout

Commercial and Industrial Temperature Ranges

Timing Waveform of Write Cycle No.1 (WE Controlled Timing)(1,2,4)

ADDRESS

tWC

tAW

CS

tWR

WE

N CE DATAOUT

I N A DATAIN

tAS

(3)

tWHZ (5)

tWP (2)

tOW (5)

HIGH IMPEDANCE

tDH

tDW

DATAIN VALID

tCHZ (5)

(3)

3484 drw 07

ART SCE124SIGNS Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,4)

P LE 1V ES ADDRESS

O 7 D CS

tWC

tAW

S ER W tAS

tCW

tWR(3)

B RD NE WE

O OFOR DATAIN

tDW

tDH

DATAIN VALID

3484 drw 08

NOTES:

1. A write occurs during the overlap of a LOW CS and a LOW WE.

2. OE is continuously HIGH. During a WE controlled write cycle with OE LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to be

placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is the specified tWP.

3. During this period, I/O pins are in the output state, and input signals must not be applied.

4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high impedance state. CS must be active during the tCW write

period.

5. Transition is measured ±200mV from steady state.

6.642

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