NLX2G66MU3TCG(2016) 查看數據表（PDF） - ON Semiconductor
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NLX2G66MU3TCG Datasheet PDF : 11 Pages
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NLX2G66
Table 5. ANALOG SWITCH CHARACTERISTICS (continued)
Symbol
ISOOff
Parameter
Off−Channel
Feedthrough
Isolation
Conditions
RL = 600 Ω, CL = 50 pF,
fIN = 1 MHz Sine Wave
See Figure 9
RL = 50 Ω, CL = 5 pF,
fIN = 1 MHz Sine Wave
See Figure 9
XTalk
Crosstalk
Between Switches
RL = 600 Ω, CL = 50 pF,
fIN = 1 MHz Sine Wave
See Figure 10
RL = 50 Ω, CL = 5 pF,
fIN = 1 MHz Sine Wave
See Figure 10
Feedthrough Noise,
Control to Switch
RL = 600 Ω, CL = 50 pF,
fIN = 1 MHz Square Wave, tr = tf = 2 ns,
See Figure 11
THD
Total Harmonic
Distortion
CL = 50 pF, RL = 50 Ω,
fIN = 600 Hz to 20 KHz Sine Wave,
See Figure 12
Table 6. POWER DISSIPATION CHARACTERISTICS
Symbol
CPD
Parameter
Power Dissipation
Capacitance
Conditions
f = 10 MHz
VCC
1.65
2.3
3.0
4.5
1.65
2.3
3.0
4.5
1.65
2.3
3.0
4.5
1.65
2.3
3.0
4.5
1.65
2.3
3.0
4.5
2.3
3.0
4.5
VCC
1.65
2.3
3.0
4.5
255C
Typ
−70
−70
−70
−70
−60
−60
−60
−60
−100
−100
−100
−100
−90
−90
−90
−90
10
10
10
15
0.025
0.015
0.01
255C
Typ
8.0
8.9
9.6
10.9
Unit
dB
dB
mVpp
%
Unit
pF
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