GLT6200L08LI-70FG 查看數據表（PDF） - G-Link Technology
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GLT6200L08LI-70FG Datasheet PDF : 12 Pages
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G-LINK
Truth Table:
CE1
WE
OE
H
X
X
X
X
X
L
H
L
L
H
H
L
L
X
*Key : X = Don’t Care, L = Low, H = High
Data
High-Z
High-Z
Data Out
High-Z
Data Out
GLT6200L08
Ultra Low Power 256k x 8 CMOS SRAM
Nov 2000(Rev. 1.0)
Mode
Standby
Standby
Active, Read
Active, Output Disable
Active, Write
Absolute Maximum Ratings*
Parameter
Voltage on Any Pin Relative to Gnd
Power Dissipation
Storage Temperature (Plastic)
Temperature Under Bias
Symbol
Vt
PT
Tstg
Tbias
Minimum
-0.5
-
-55
-40
Maximum
Vcc+0.5
1.0
+150
+85
Unit
V
W
°C
°C
*Note : Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any conditions outside those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Recommended Operating Conditions ( TA = -25°C to + 85°C)
Parameter
Symbol
Min
Typ
Supply Voltage
VCC
2.7
3
Gnd
0.0
0.0
Input Voltage
VIH
2.0
-
VIL
-0.5*
-
* VIL min = -1.0V for pulse width less than tRC/2.
Max
3.3
0.0
VCC+0.2
0.6
Unit
V
V
V
V
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-3-
G-Link Technology Corporation, Taiwan
6F No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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