GLT6200L08LI-70FG 查看數據表（PDF） - G-Link Technology

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GLT6200L08LI-70FG

Ultra Low Power 256k x 8 CMOS SRAM

G-Link Technology  

G-LINK

GLT6200L08

Ultra Low Power 256k x 8 CMOS SRAM

Nov 2000(Rev. 1.0)

DC Operating Characteristics ( Vcc=2.7V to 3.3V, TA =-25°C to + 85°C)

Parameter

Sym.

Test Conditions

55

Min Max

70

Min Max

Input Leakage Current

ILI

VCC = Max,

Vin = Gnd to VCC

1

1

Output Leakage

Current

ILO CE1 =VIH

1

1

VCC = Max, VOUT = Gnd to VCC

85

Min Max

Unit

1 µA

1 µA

Operating Power

Supply Current

ICC

CE1 =VIL ,

VIN=VIH or VIL, IOUT=0mA

3

3

3 mA

ICC1 CE1 =VIL ,

30

30

25 mA

IOUT = 0mA,

Average Operating

Current

Min Cycle, 100% Duty

ICC2 CE1 =0.2V

3

3

3 mA

IOUT = 0mA,

Cycle Time=1µs, 100% Duty

Standby Power Supply ISB

Current(TTL Level)

Standby Power Supply ISB1

Current (CMOS Level)

CE1 =VIH

CE1 ≥ VCC-

0.2V or f=0

VIN ≤ 0.2V or

VIN ≥ VCC-0.2V

0.5

0.5

0.5 mA

10

10

10 µA

2

2

2 µA

Output Low Voltage

Output High Voltage

VOL IOL = 2 mA

VOH IOH = -1 mA

0.4

0.4

0.4 V

2.4

2.4

2.4

V

Data Retention

Parameter

VCC for Data retention

Data Retention Current

Chip Deselect to Data Retention Time

Operating Recovery Time(2)

Sym.

VDR

ICCDR

tCDR

tR

Test Conditions

CE1 ≥ VCC -0.2V or

VIN ≥ VCC -0.2V or

VIN ≤ 0.2V

Min.

1.0

-

0

tRC

Max.

-

2

-

-

Unit

V

µA

ns

ns

G-Link Technology Corporation

2701 Northwestern Parkway

Santa Clara, CA 95051, U.S.A.

-4-

G-Link Technology Corporation, Taiwan

6F No. 24-2, Industry E. RD. IV, Science Based

Industrial Park, Hsin Chu, Taiwan.

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