PHB45NQ15T 查看數據表（PDF） - Philips Electronics

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PHB45NQ15T

N-channel TrenchMOS™ standard level FET

Philips Electronics 

PHP/PHB45NQ15T

N-channel TrenchMOS™ standard level FET

Rev. 01 — 8 November 2004

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode field effect transistor in a plastic package

using TrenchMOS™ technology.

1.2 Features

s Low on-state resistance

s Low thermal resistance

s Fast switching

s Low gate charge.

1.3 Applications

s DC-to-DC primary side switching

s AC-to-DC secondary side

rectification.

1.4 Quick reference data

s VDS ≤ 150 V

s RDSon ≤ 42 mΩ

s ID ≤ 45.1 A

s Qgd = 10.3 nC (typ).

2. Pinning information

Table 1: Discrete pinning

Pin Description

Simplified outline

1 gate

2 drain

[1]

mb

3 source

mb mounting base;

connected to drain

Symbol

mb

D

G

mbb076 S

123

SOT78 (TO-220AB)

[1] It is not possible to make a connection to pin 2 of the SOT404 package.

2

1

3

SOT404 (D2-PAK)

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