PHB45NQ15T 查看數據表（PDF） - Philips Electronics
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PHB45NQ15T Datasheet PDF : 13 Pages
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Philips Semiconductors
PHP/PHB45NQ15T
N-channel TrenchMOS™ standard level FET
50
ID
Tj = 25 °C
(A)
40
30
20
10 V 5 V
03ao19
4.8 V
4.6 V
4.4 V
4.2 V
80
RDSon
(mΩ)
Tj = 25 °C
60
40
03ao20
VGS = 4.4 V 4.6 V 4.8 V
5V
10 V
4V
10
3.8 V
VGS = 3.6 V
0
0
1
2
3
4
VDS (V)
20
0
0
10
20
30
40
50
ID (A)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values.
50
ID
(A)
40
VDS > ID x RDSon
03ao21
3
a
2.5
03al51
2
30
1.5
20
1
10
175 °C
Tj = 25 °C
0.5
0
0
2
4
6
VGS (V)
0
-75
-25
25
75
125
175
Tj (°C)
Tj = 25 °C and 175 °C; VDS > ID × RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 14012
Product data sheet
Rev. 01 — 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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