PHB45NQ15T 查看數據表（PDF） - Philips Electronics
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PHB45NQ15T Datasheet PDF : 13 Pages
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Philips Semiconductors
PHP/PHB45NQ15T
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
PHP45NQ15T
TO-220AB Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead SOT78
TO-220AB
PHB45NQ15T
D2-PAK
Plastic single-ended surface mounted package (D2-PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 19.1 A;
tp = 0.1 ms; VDD ≤ 150 V; RGS = 50 Ω;
VGS = 10 V; starting at Tj = 25 °C
Min
Max Unit
-
150
V
-
150
V
-
±20
V
-
45.1 A
-
31.9 A
-
90.2 A
-
230
W
−55
+175 °C
−55
+175 °C
-
45.1 A
-
90.2 A
-
180
mJ
9397 750 14012
Product data sheet
Rev. 01 — 8 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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