R6012ANX 查看數據表（PDF） - ROHM Semiconductor
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R6012ANX Datasheet PDF : 14 Pages
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R6012ANX
Electrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
10000
1000
100
Coss
Crss
Ciss
10
Ta = 25ºC
f = 1MHz
VGS = 0V
1
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Data Sheet
Fig.19 Coss Stored Energy
10
Ta = 25ºC
8
6
4
2
0
0
200
400
600
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
10000
1000
100
tf
td(off)
Ta = 25ºC
VDD = 300V
VGS = 10V
RG = 10Ω
Pulsed
10
tr
td(on)
1
0.01
0.1
1
10
100
Drain Current : ID [A]
Fig.21 Dynamic Input Characteristics
15
Ta = 25ºC
VDD ⋍ 300V
ID = 12A
10
RG = 10Ω
Pulsed
5
0
0
10
20
30
40
50
Total Gate Charge : Qg [nC]
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© 2012 ROHM Co., Ltd. All rights reserved.
10/13
2012.01 - Rev.B
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