R6012ANX 查看數據表（PDF） - ROHM Semiconductor
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R6012ANX Datasheet PDF : 14 Pages
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R6012ANX
Data Sheet
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
IS *1
ISM *2
Tc = 25°C
VSD *6
trr *6
Qrr *6
Irrm *6
VGS = 0V, IS = 12A
IS = 12A
di/dt = 100A/µs
dirr/dt Tj = 25°C
-
-
12
-
-
48
-
-
1.5
-
396
-
-
4.4
-
-
22
-
-
640
-
Unit
A
A
V
ns
µC
A
A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1
0.158
Rth2
0.75
K/W
Rth3
2.15
Symbol
Cth1
Cth2
Cth3
Value
0.00247
0.0317
0.485
Unit
Ws/K
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© 2012 ROHM Co., Ltd. All rights reserved.
4/13
2012.01 - Rev.B
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