R6012ANX 查看數據表（PDF） - ROHM Semiconductor
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R6012ANX Datasheet PDF : 14 Pages
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R6012ANX
Data Sheet
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
gfs *6
Ciss
Coss
Crss
VDS = 10V, ID = 6.0A
VGS = 0V
VDS = 25V
f = 1MHz
Values
Unit
Min. Typ. Max.
3.5 8.5
-
S
-
1300
-
-
890
-
pF
-
45
-
Effective output capacitance,
energy related
Effective output capacitance,
time related
Co(er)
Co(tr)
VGS = 0V
VDS = 0V to 480V
-
63
-
pF
-
63
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *6 VDD ⋍ 300V, VGS = 10V
-
tr *6
ID = 6A
-
td(off) *6 RL = 50Ω
-
tf *6
RG = 10Ω
-
30
-
30
-
ns
90
180
35
70
Gate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *6
Qgs *6
Qgd *6
VDD ⋍ 300V
ID = 12A
VGS = 10V
-
35
-
-
7
-
nC
-
15
-
Gate plateau voltage
V(plateau) VDD ⋍ 300V, ID = 12A
-
6.0
-
V
*1 Limited only by maximum temperature allowed.
*2 PW ≤ 10µs, Duty cycle ≤ 1%
*3 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C
*4 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
3/13
2012.01 - Rev.B
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