Q67060-S7432 查看數據表（PDF） - Infineon Technologies

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比赛名单

Q67060-S7432

SIPMOS® Power-Transistor

Infineon Technologies 

Preliminary data

SPI47N10L

SPP47N10L,SPB47N10L

SIPMOS Power-Transistor

Feature

N-Channel

Enhancement mode

Logic Level

175°C operating temperature

P-TO262-3-1

Avalanche rated

dv/dt rated

Product Summary

VDS

100 V

RDS(on) 26 m

ID

47 A

P-TO263-3-2

P-TO220-3-1

Type

SPP47N10L

SPB47N10L

SPI47N10L

Package

P-TO220-3-1

P-TO263-3-2

P-TO262-3-1

Ordering Code

Q67040-S4177

Q67040-S4176

Q67060-S7432

Marking

47N10L

47N10L

47N10L

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TC=25°C

TC=100°C

Pulsed drain current

TC=25°C

Avalanche energy, single pulse

ID=47 A , VDD=25V, RGS=25

Avalanche energy, periodic limited by Tjmax

Reverse diode dv/dt

ID puls

EAS

EAR

dv/dt

IS=47A, VDS=0V, di/dt=200A/µs

Gate source voltage

VGS

Power dissipation

Ptot

TC=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Tj , Tstg

Page 1

Value

Unit

A

47

33

188

400

mJ

17.5

6

kV/µs

±20

V

175

W

-55... +175

°C

55/175/56

2002-01-09

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