Q67060-S7432 查看數據表（PDF） - Infineon Technologies

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比赛名单

Q67060-S7432

SIPMOS® Power-Transistor

Infineon Technologies 

Preliminary data

SPI47N10L

SPP47N10L,SPB47N10L

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

gfs

VDS
2*ID*RDS(on)max ,

18

36

-S

ID=33A

Input capacitance

Ciss

VGS=0V, VDS=25V,

- 2000 2500 pF

Output capacitance

Coss

f=1MHz

-

375 470

Reverse transfer capacitance Crss

-

210 265

Turn-on delay time

td(on)

VDD=50V, VGS=4.5V,

-

50 75 ns

Rise time

tr

ID=47A, RG=2

-

100 150

Turn-off delay time

td(off)

-

50 75

Fall time

tf

-

70 105

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Qgs

Qgd

VDD=80V, ID=47A

Gate charge total

Qg

VDD=80V, ID=47A,

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=80V, ID=47A

Reverse Diode

Inverse diode continuous

IS

forward current

Inverse diode direct current, ISM

pulsed

TC=25°C

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

VGS=0V, IF=94A

VR=50V, IF =lS,

diF /dt=100A/µs

-

8

12 nC

-

16 24

-

90 135

- 3.38 - V

-

-

47 A

-

- 188

-

1.1 1.5 V

-

80 120 ns

-

340 510 nC

Page 3

2002-01-09

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