Q67060-S7432 查看數據表（PDF） - Infineon Technologies
零件编号
产品描述 (功能)
比赛名单
Q67060-S7432 Datasheet PDF : 8 Pages
| |||
Preliminary data
SPI47N10L
SPP47N10L,SPB47N10L
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 47 A , VDD = 25 V, RGS = 25
400
mJ
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = 47 A pulsed
SPP47N10L
16
V
320
12
280
240
10
0,2 VDS max
0,8 VDS max
200
8
160
6
120
4
80
2
40
0
25 45 65 85 105 125 145 °C 185
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
0
0 20 40 60 80 100 120 nC 150
QGate
SPP47N10L
120
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60 -20 20 60 100 140 °C 200
Tj
Page 7
2002-01-09
Share Link: 