SSM9915K 查看數據表（PDF） - Silicon Standard Corp.

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SSM9915K

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Silicon Standard Corp. 

SSM9915K

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Simple drive requirement

Lower gate charge

Fast switching characteristic

Description

D

S

D

SOT-223 G

Advanced Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

low on-resistance and cost-effectiveness.

BVDSS

RDS(ON)

ID

20V

50mΩ

6.2A

D

G

S

Absolute Maximum Ratings

Symbol

Parameter

VDS

VGS

ID @ TA=25°C

ID @ TA=70°C

IDM

PD @ TA=25°C

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current3

Continuous Drain Current3

Pulsed Drain Current1

Total Power Dissipation

Linear Derating Factor

TSTG

Storage Temperature Range

TJ

Operating Junction Temperature Range

Thermal Data

Symbol

Rthj-a

Parameter

Thermal Resistance Junction-ambient3

Rating

20

±12

6.2

5

30

3.2

0.025

-55 to 150

-55 to 150

Units

V

V

A

A

A

W

W/°C

°C

°C

Max.

Value

40

Unit

°C/W

Rev.1.01 4/06/2004

www.SiliconStandard.com

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