SSM9915K 查看數據表（PDF） - Silicon Standard Corp.
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SSM9915K Datasheet PDF : 4 Pages
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14
I D =6A
12
V DS =16V
10
V DS =12V
V DS =10V
8
6
4
2
0
0
2
4
6
8
10
12
14
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
SSM9915K
f=1.0MHz
1000
C iss
100
C oss
C rss
10
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
1
0.1
T A =25 o C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90oC/W Per Unit Base
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
10
100
1000
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
td(on) tr
td(off) tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.1.01 4/06/2004
www.SiliconStandard.com
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