STW18NM80 查看數據表（PDF） - STMicroelectronics

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STW18NM80

N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages

STMicroelectronics 

STB18NM80, STF18NM80, STP18NM80, STW18NM80

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS Drain-source voltage

VGS Gate-source voltage

Drain current (continuous) at

ID

TC = 25 °C

ID

IDM (2)

Drain current (continuous) at

TC = 100 °C

Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

VISO

Insulation withstand voltage (RMS)

from all three leads to external heat

sink (t = 1 s;TC = 25 °C)

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

Value

Unit

TO-220 D²PAK TO-247 TO-220FP

800

V

± 30

V

17

17 (1)

A

10.71

68

190

10.71(1)

A

68 (1)

A

40

W

2500

V

-65 to 150

°C

150

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case

Rthj-amb Thermal resistance junction-amb

Rthj-pcb Thermal resistance junction-pcb

Tl

Maximum lead temperature for

soldering purpose

Value

Unit

TO-220 D²PAK TO-247 TO-220FP

0.66

62.5

50

30

3.13

°C/W

62.5

°C/W

°C/W

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)

Max value

Unit

4

A

600

mJ

Doc ID 15421 Rev 5

3/21

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