STW18NM80 查看數據表（PDF） - STMicroelectronics

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比赛名单

STW18NM80

N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages

STMicroelectronics 

Electrical characteristics

STB18NM80, STF18NM80, STP18NM80, STW18NM80

2

Electrical characteristics

(TCASE= 25 °C unless otherwise specified)

Table 5.

Symbol

On/off states

Parameter

Test conditions

V(BR)DSS

Drain-source breakdown

voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage drain

current (VGS = 0)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

Static drain-source

on-resistance

ID = 1 mA, VGS = 0

VDS = 800 V,

VDS = 800 V,Tc = 125 °C

VGS = ± 30 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 8.5 A

Min. Typ. Max. Unit

800

V

10 µA

100 µA

±100 nA

3

4

5V

0.25 0.295 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs(1) Forward transconductance VDS = 15 V, ID= 8.5 A

- 14 -

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

2070

pF

VDS = 50 V, f = 1 MHz, VGS = 0 - 210 -

pF

29

pF

Coss

(2)

eq.

Equivalent output

capacitance

VGS = 0, VDS = 0 to 640 V

- 316 - pF

RG Gate input resistance

f = 1 MHz Gate DC Bias = 0

Test Signal Level = 20 mV

-4

-

Ω

Open Drain

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 640 V, ID = 17 A

VGS = 10 V

(see Figure 17)

70

nC

- 13 - nC

40

nC

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

4/21

Doc ID 15421 Rev 5

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